Title :
Effects of an InGaP electron barrier layer on 1.55 μm laser diode performance
Author :
Abraham, P. ; Piprek, J. ; DenBaars, S.P. ; Wers, J. E Bo
Author_Institution :
Dept. of Electron. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
Temperature sensitive loss mechanisms are known to severely limit the performance of InGaAsP/InP laser diodes emitting at 1.55 μm. In this paper, we report on a simple modification of the classical InGaAsP laser structure to reduce electron leakage from the separate confinement heterostructure (SCH) layer
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor heterojunctions; semiconductor lasers; 1.55 mum; InGaAsP-InGaP-InP; InGaAsP-InP; InGaAsP/InP laser diodes; InGaP electron barrier layer effects; electron leakage; laser diode performance; laser structure modification; separate confinement heterostructure layer; temperature sensitive loss mechanisms; Charge carrier processes; Diode lasers; Electrons; Indium compounds; Indium phosphide; Lattices; Performance loss; Radiative recombination; Temperature sensors; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712741
