Title :
Impact on inter symbol interference (ISI) noise due to simulation error
Author :
Bhattacharyya, Bidyut K. ; Xu, Bao Shu ; Bhattacharya, Sikha
Author_Institution :
Intel Corp., USA
Abstract :
In this paper, we are going to discuss the error in determining the actual intersymbol interference noise (ISI) due to different circuit simulation methodology, while using a standard circuit simulator. In this paper, we have compared three different methods to predict accurately ISI noise. All three methods show that errors caused by circuit simulation can make the eye worst. We have also shown a method which allows one to determine that error and calculate the actual range of ISI noise. As we move towards sampling mVolt signals at the receiver end (Bhattacharyya, 2004 and Bhattacharyya, 2005), one needs to minimize the error that arises due to circuit simulation methodology. This is essential, in order to predict the actual performance of the interconnect.
Keywords :
circuit simulation; integrated circuit interconnections; integrated circuit noise; intersymbol interference; circuit simulation error; inter symbol interference noise; interconnect performance; Circuit noise; Circuit simulation; Computational modeling; Frequency; Integrated circuit interconnections; Intersymbol interference; Pulse measurements; Sampling methods; Transmitters; Voltage;
Conference_Titel :
Electrical Performance of Electronic Packaging, 2005. IEEE 14th Topical Meeting on
Print_ISBN :
0-7803-9220-5
DOI :
10.1109/EPEP.2005.1563742