Analysis of performances of InSb HEMTs using quantum-corrected Monte Carlo simulation

The strained band structures of InSb are calculated, and then the DC and RF performances of the InSb HEMTs are analyzed by using the quantum-corrected Monte Carlo (MC) simulation. These are also compared with the InAs HEMTs. Although the compressive strain applied to the channel increases the electron effective mass, m*, the InSb HEMTs still show the higher current drivability and the higher f_T than the InAs HEMTs from the lower V_ds. However, the severe impact ionization occurs from the lower V_ds owing to the smaller impact ionization threshold energy, E_th, although the compressive strain increases it. This restricts the InSb HEMTs within the low V_ds applications.