• DocumentCode
    2843325
  • Title

    Enhancement of characteristic temperature in In0.81Ga 0.19As/InGaAsP multiple quantum well laser operating at 1.74 μm for laser monitor

  • Author

    Ubukata, Akinori ; Dong, Jie ; Matsumoto, Koh

  • Author_Institution
    Tsukuba Labs., Nippon Sanso Corp., Ibaraki, Japan
  • fYear
    1998
  • fDate
    11-15 May 1998
  • Firstpage
    721
  • Lastpage
    724
  • Abstract
    InGaAs/InGaAsP compressively strained quantum well lasers operating at 1.74 μm has been fabricated with the thin carrier blocking layers sandwiching the active layer for carrier confinement. The laser characteristic temperature (T0) of 85 K has been obtained, which is a high value in ever reported InGaAsP lasers in this wavelength range
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; 1.74 mum; 85 K; In0.81Ga0.19As-InGaAsP; In0.81Ga0.19As/InGaAsP multiple quantum well laser; carrier confinement; characteristic temperature enhancement; thin carrier blocking layers; Carrier confinement; Indium gallium arsenide; Optical materials; Optical sensors; Optical waveguides; Photonic band gap; Quantum well lasers; Semiconductor lasers; Temperature; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1998 International Conference on
  • Conference_Location
    Tsukuba
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-4220-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1998.712744
  • Filename
    712744
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2843325