Site-controlled growth of InP/InGaP quantum dots

Author

Baumann, V. ; Stumpf, Frederic ; Kremling, S. ; Steinl, T. ; Forchel, A. ; Schneider, C. ; Hofling, S. ; Kamp, M.

Author_Institution

Wilhelm Conrad Rontgen Res. Center for Complex Mater. Syst., Univ. Wurzburg, Wurzburg, Germany

fYear

2012

fDate

27-30 Aug. 2012

Firstpage

261

Lastpage

264

Abstract

We report on site-controlled growth of InP/InGaP quantum dots (QDs) on GaAs substrates. Shallow nanoholes etched into a InGaP layer are used as nucleation sites for the QDs. Optimized growth conditions and the use of strain mediated nucleation allow us to realize QD arrays with excellent long range ordering on hole pitches as large as 1.25 μm. Single QD lines with an average linewidth of 553 μeV and best values below 200 μeV are observed. Second-order photon-autocorrelation measurements show clear single photon emission with g(2)(0)=0.13±0.01.

Keywords

III-V semiconductors; etching; gallium compounds; indium compounds; molecular beam epitaxial growth; nanofabrication; nanostructured materials; nucleation; photoelectron spectra; photon correlation spectroscopy; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; GaAs; GaAs substrates; InP-InGaP; etching; hole pitches; photon emission; quantum dots; second-order photon-autocorrelation measurements; shallow nanoholes; site-controlled growth; strain mediated nucleation; Gallium arsenide; Indium phosphide; Photonics; Quantum dots; Strain; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2012 International Conference on

Conference_Location

Santa Barbara, CA

ISSN

1092-8669

Print_ISBN

978-1-4673-1725-2

Type

conf

DOI

10.1109/ICIPRM.2012.6403373

Filename

6403373