DocumentCode :
2843588
Title :
Power Modules As Key Component Group For Power Electronics
Author :
Majumdar, Gourab
Author_Institution :
Mitsubishi Electr. Corp., Tokyo
fYear :
2007
fDate :
2-5 April 2007
Abstract :
In this paper, the state-of-the-art key technologies related to the advancement of IGBT modules and IPMs as key components for a sustaining growth of power conversion technologies and equipment have been reviewed in the beginning part. In the later part, an analysis of the changing requirements from various application fields and projections of future growth for power modules required to comply with such needs will be made, including description about newer chip and packaging technologies. The paper will also highlight on the status and the possibilities of silicon carbide based power semiconductors for future power conversion applications.
Keywords :
insulated gate bipolar transistors; power electronics; IGBT modules; packaging technologies; power conversion applications; power conversion technologies; power electronics; silicon carbide based power semiconductors; Automotive engineering; Insulated gate bipolar transistors; Inverters; Matrix converters; Multichip modules; Power conversion; Power electronics; Research and development; Semiconductor device packaging; Silicon carbide; IGBT; IPM; Power Conversion and Power Module;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Conversion Conference - Nagoya, 2007. PCC '07
Conference_Location :
Nagoya
Print_ISBN :
1-4244-0843-1
Electronic_ISBN :
1-4244-0844-X
Type :
conf
DOI :
10.1109/PCCON.2007.372913
Filename :
4239128
Link To Document :
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