Title :
High-sensitivity 10Gbps Ge photoreceiver operating at λ ∼1.55 µm
Author :
Joo, Jiho ; Kim, Sanghoon ; Kim, In Gyoo ; Jang, Ki-Seok ; Kim, Gyungock
Author_Institution :
Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
We present a vertical-illumination-type 100% Ge-on-Si photodetector with the quantum efficiencies up to of 75.2% at λ~1.55 μm and 96.4% at λ~1.31 μm. The 10 Gbps photoreceiver with a fabricated 90 μm-diameter Ge photodetector exhibits the sensitivity of -18.5 dBm at a BER of 10-12 for λ~1.55 μm, which is comparable to that of III-V counterpart.
Keywords :
Ge-Si alloys; error statistics; optical fabrication; optical receivers; photodetectors; semiconductor materials; BER; Ge-Si; Si; bit rate 10 Gbit/s; interface epilayer; optical fabrication; photoreceiver; quantum efficiency; size 90 mum; vertical-illumination-type photodetector; Absorption; Bit error rate; Current measurement; Photodetectors; Semiconductor device measurement; Sensitivity; Silicon;
Conference_Titel :
Optical Communication (ECOC), 2010 36th European Conference and Exhibition on
Conference_Location :
Torino
Print_ISBN :
978-1-4244-8536-9
Electronic_ISBN :
978-1-4244-8534-5
DOI :
10.1109/ECOC.2010.5621182
