• DocumentCode
    2843682
  • Title

    Evaluation of differential gain of 1.3 μm AlGaInAs/InP strained MQW lasers

  • Author

    Ishikawa, T. ; Higashi, T. ; Uchida, T. ; Fujii, T. ; Yamamoto, Takayuki ; Shoji, H. ; Kobayashi, M.

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi, Japan
  • fYear
    1998
  • fDate
    11-15 May 1998
  • Firstpage
    729
  • Lastpage
    732
  • Abstract
    Differential gain (dg/dn) of AlGaInAs strained MQW lasers was estimated from relaxation oscillation frequency (fr), and compared with that of GaInAsP lasers. The estimated dg/dn of the AlGaInAs laser was 1.1×10-15 cm2 at 25°C, which was 1.4 times larger than that of the GaInAsP laser. The AlGaInAs laser also showed less temperature dependence of dg/dn. The degradation of dg/dn in 25-85°C was only 28%, while that of the GaInAsP laser was 51%
  • Keywords
    aluminium compounds; gallium arsenide; indium compounds; quantum well lasers; 1.3 μm AlGaInAs/InP strained MQW lasers; 1.3 mum; 25 C; 25 to 85 C; AlGaInAs-InP; differential gain; relaxation oscillation frequency; Degradation; Epitaxial growth; Epitaxial layers; Indium phosphide; Optical reflection; Optical waveguides; Quantum well devices; Temperature dependence; Threshold current; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1998 International Conference on
  • Conference_Location
    Tsukuba
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-4220-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1998.712746
  • Filename
    712746
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2843682