DocumentCode :
2843682
Title :
Evaluation of differential gain of 1.3 μm AlGaInAs/InP strained MQW lasers
Author :
Ishikawa, T. ; Higashi, T. ; Uchida, T. ; Fujii, T. ; Yamamoto, Takayuki ; Shoji, H. ; Kobayashi, M.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fYear :
1998
fDate :
11-15 May 1998
Firstpage :
729
Lastpage :
732
Abstract :
Differential gain (dg/dn) of AlGaInAs strained MQW lasers was estimated from relaxation oscillation frequency (fr), and compared with that of GaInAsP lasers. The estimated dg/dn of the AlGaInAs laser was 1.1×10-15 cm2 at 25°C, which was 1.4 times larger than that of the GaInAsP laser. The AlGaInAs laser also showed less temperature dependence of dg/dn. The degradation of dg/dn in 25-85°C was only 28%, while that of the GaInAsP laser was 51%
Keywords :
aluminium compounds; gallium arsenide; indium compounds; quantum well lasers; 1.3 μm AlGaInAs/InP strained MQW lasers; 1.3 mum; 25 C; 25 to 85 C; AlGaInAs-InP; differential gain; relaxation oscillation frequency; Degradation; Epitaxial growth; Epitaxial layers; Indium phosphide; Optical reflection; Optical waveguides; Quantum well devices; Temperature dependence; Threshold current; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
ISSN :
1092-8669
Print_ISBN :
0-7803-4220-8
Type :
conf
DOI :
10.1109/ICIPRM.1998.712746
Filename :
712746
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2843682
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