• DocumentCode
    28437
  • Title

    SiGe 135-GHz amplifier with inductive positive feedback operating near fmax

  • Author

    Hyunchul Kim ; Jongwon Yun ; Kiryong Song ; Jae-Sung Rieh

  • Author_Institution
    Sch. of Electr. Eng., Korea Univ., Seoul, South Korea
  • Volume
    49
  • Issue
    19
  • fYear
    2013
  • fDate
    Sept. 12 2013
  • Firstpage
    1229
  • Lastpage
    1230
  • Abstract
    A common base five-stage D-band amplifier developed in a 0.18-μm SiGe HBT technology is presented. An inductive positive feedback technique is employed to enhance the gain, leading to 12.2 dB peak gain at 135 GHz with a power consumption of 67.2 mW. Measured output saturated power was - 5.8 dBm. The total chip area including pads is 1.54 × 0.56 mm2.
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; millimetre wave amplifiers; power consumption; HBT technology; SiGe; five-stage D-band amplifier; frequency 135 GHz; gain 12.2 dB; inductive positive feedback; inductive positive feedback technique; power 67.2 mW; power consumption; size 0.18 mum;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2013.1660
  • Filename
    6612797
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=28437