A new high power GTO with low snubber capacity

A high-power GTO (gate turn-off thyristor) rated at 4.5 kV of blocking voltage and 4 kA of controllable on-state current with 6 mu F of snubber capacity was developed. Some new technologies were adopted to realize this high power GTO. The first is a novel pattern layout, a hexagon, which realizes higher n-emitter density and uniformity of gate current. The second is the optimization of n-emitter width which improves controllable on-state current. The third is optimization of anode short emitter ratio. The fourth is a cathode and gate structure which improves uniformity of the gate to cathode resistance.<>