Nondestructive RBSOA characterization of IGBTs and MCTs

Author

Chen, Dan Y. ; Lee, Fred C. ; Carpenter, Grant

Author_Institution

Virginia Power Electron. Center, Virginia Polytech Inst. & State Univ., Blacksburg, VA, USA

fYear

1991

fDate

Sept. 28 1991-Oct. 4 1991

Firstpage

1546

Abstract

Nondestructive evaluations of IGBTs (insulated-gate bipolar transistors) and MCTs (MOS-controller thyristors) are discussed and their corresponding RBSOAs established. Test results are presented for a variety of commercial devices at different temperatures. It was observed that, compared to BJTs (bipolar junction transistors), IGBTs and MCTs exhibit very different turn-off breakdown characteristics. Avalanche breakdown of the parasitic transistor accounts for the loss of dynamic voltage blocking capability of both IGBTs and MCTs.<>

Keywords

bipolar transistors; insulated gate bipolar transistors; metal-insulator-semiconductor devices; semiconductor device testing; MOS-controller thyristors; avalanche breakdown; bipolar junction transistors; dynamic voltage blocking capability; insulated-gate bipolar transistors; parasitic transistor accounts; reverse bias safe operating area; turn-off breakdown characteristics; Circuits; Electric breakdown; FETs; Insulated gate bipolar transistors; Latches; MOSFETs; Nondestructive testing; Proximity effect; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Society Annual Meeting, 1991., Conference Record of the 1991 IEEE

Conference_Location

Dearborn, MI, USA

Print_ISBN

0-7803-0453-5

Type

conf

DOI

10.1109/IAS.1991.178066

Filename

178066