Title :
The evolution of low noise devices and amplifiers
Author :
Niehenke, Edward C.
Author_Institution :
Niehenke Consulting, Baltimore, MD, 21075, USA
Abstract :
This paper traces the development of low noise devices and amplifiers. The device technology changed significantly over time starting with the vacuum tube, then varactor diode parametric amplifiers, and evolving to the three terminal solid state transistor. Technological transistor innovations lowered the low noise amplifier (LNA) noise figure and raised the frequency of operation. Devices include the bipolar junction transistor (BJT), heterojunction bipolar transistor (HBT), complimentary metal oxide semiconductor (CMOS) transistor, field effect transistor (FET), high electron mobility transistor (HEMT), pseudomorphic high electron transistor (PHEMT), and metamorphic high electron mobility transistor (MHEMT). LNA semiconductors include Silicon (Si), Gallium Arsenide (GaAs), Indium Phosphide (InP), and Gallium Nitride (GaN) and the various heterojunctions of these semiconductors improve the performance
Keywords :
CMOS integrated circuits; Gallium arsenide; HEMTs; Noise; Noise figure; GaAs; GaN; Ge; Low noise amplifiers (LNA); Si; bipolar junction transistor (BJT); complimentary metal oxide semiconductor (CMOS) transistors; field effect transistor (FET); metamorphic high electron mobility transistor (MHEMT); monolithic microwave integrated circuit (MMIC); parametric amplifier; pseudomorphic high electron transistor (PHEMT); vacuum tubes;
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2012.6258248
