DocumentCode
2844324
Title
A 20.7% locking range W-band fully integrated injection-locked oscillator using 90 nm CMOS technology
Author
Yeh, Yen-Liang ; Huang, Chih-Sheng ; Chang, Hong-Yeh
Author_Institution
Department of Electrical Engineering, National Central University, Jhongli City, 32001 Taiwan
fYear
2012
fDate
17-22 June 2012
Firstpage
1
Lastpage
3
Abstract
A 20.7% locking range W-band fully integrated injection-locked oscillator (ILO) using 90 nm CMOS technology is presented in this paper. The proposed ILO is designed using a ring-based triple-push topology. The free-running oscillation frequency of the ILO is 97.6 GHz. When the input subharmonic number is 3, the ILO demonstrates a locking range from 88.1 to 108.5 GHz without bias tuning, a minimum conversion loss of 14.6 dB, and an output power flatness of within 2 dB. When the input subharmonic number is 6, the locking range is from 96.1 to 98.4 GHz and the minimum conversion loss is 17.2 dB. The dc power consumption is 55.4 mW from 1.2-V dc supply voltage. The chip size is 0.733 × 0.492 mm2. As compared to the previously reported ILOs in the MMW band, our proposed ILO has the widest locking range and good power flatness.
Keywords
Bandwidth; CMOS integrated circuits; Phase noise; Power generation; Resonant frequency; Topology; CMOS; W-band; millimeter-wave; oscillator; phase noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location
Montreal, QC, Canada
ISSN
0149-645X
Print_ISBN
978-1-4673-1085-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2012.6258252
Filename
6258252
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