DocumentCode :
2844398
Title :
Power Semiconductor Devices-Development Trends and System Interactions
Author :
Lorenz, Leo
Author_Institution :
Infineon Technol., Shanghai
fYear :
2007
fDate :
2-5 April 2007
Firstpage :
348
Lastpage :
354
Abstract :
System leadership in power converters for all automotive and industrial applications requires power semiconductor devices showing outstanding electrical and thermal performance, having excellent capabilities towards ruggedness and proved zero defect reliability data. In this paper an overview of the key power semiconductor devices such as IGBT´s, super junction transistor and SiC components are shown and their major development trends discussed. Future requirements towards technology advancements and application aspects are demonstrated. A key success factor for future device developments will be a tight cross functional cooperation between devices physicists, packaging experts and system engineers.
Keywords :
automotive electronics; insulated gate bipolar transistors; power convertors; power semiconductor devices; semiconductor device packaging; semiconductor device reliability; silicon compounds; technological forecasting; IGBT; SiC; automotive system; future developments; industrial system; packaging technology; power converters; power semiconductor devices; super junction transistor; zero defect reliability data; Automotive engineering; Control systems; Electronics cooling; Insulated gate bipolar transistors; Power electronics; Power semiconductor devices; Power system reliability; Semiconductor device reliability; Silicon carbide; Vehicle dynamics; High power density design; Packaging technologies; Power Semiconductor devices; SiC device trends;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Conversion Conference - Nagoya, 2007. PCC '07
Conference_Location :
Nagoya
Print_ISBN :
1-4244-0844-X
Electronic_ISBN :
1-4244-0844-X
Type :
conf
DOI :
10.1109/PCCON.2007.372991
Filename :
4239181
Link To Document :
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