A 2.6GHz band 537W peak power GaN HEMT asymmetric Doherty amplifier with 48% drain efficiency at 7dB

A 537W saturation output power (Psat) asymmetric Doherty amplifier for 2.6GHz band was successfully developed. The main and peak amplifiers were implemented with Psat of 210W and 320W GaN HEMTs. The newly developed 320W GaN HEMT consists of a single GaN die, both input and output partial match networks and a compact package. Its output matching network was tuned to inverse class F and a single-ended 320W GaN HEMT achieved higher than 61.8% drain efficiency from 2.4GHz to 2.7GHz. The 210W and 320W GaN HEMTs asymmetric Doherty amplifier exhibited 57.3dBm (537W) Psat and 48% drain efficiency with −50.6dBc ACLR at 50.3dBm (107W) average output power using a 4-carrier W-CDMA signal and commercially available digital pre-distortion system. These excellent performances show the good suitability for 2.6GHz band basestations.