DocumentCode :
2844699
Title :
A distributed model of the saturation characteristics of integrated circuit transistors
Author :
Dickson, L. ; Happ, W.
Author_Institution :
Motorola Semiconductor Products Division, Phoenix, AZ, USA
Volume :
X
fYear :
1967
fDate :
15-17 Feb. 1967
Firstpage :
70
Lastpage :
71
Keywords :
Computational geometry; Dielectric substrates; Dielectric thin films; Electron emission; Equations; Integrated circuit modeling; NASA; Resistors; Silicon; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1967 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1967.1154520
Filename :
1154520
Link To Document :
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