DocumentCode :
2844757
Title :
Picosecond silicon monolithic current-switching circuit using PN junction isolation and diffused resistors
Author :
Wu, B. ; Dhaka, V. ; Chen, C.
Author_Institution :
IBM Corp., East Fishkill, NY, USA
Volume :
X
fYear :
1967
fDate :
15-17 Feb. 1967
Firstpage :
66
Lastpage :
67
Keywords :
Circuit simulation; Computer simulation; Delay; Equivalent circuits; Nonhomogeneous media; Packaging; Resistors; Silicon; Switches; Switching circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1967 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1967.1154523
Filename :
1154523
Link To Document :
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