DocumentCode

2844757

Title

Picosecond silicon monolithic current-switching circuit using PN junction isolation and diffused resistors

Author

Wu, B. ; Dhaka, V. ; Chen, C.

Author_Institution

IBM Corp., East Fishkill, NY, USA

Volume

X

fYear

1967

fDate

15-17 Feb. 1967

Firstpage

66

Lastpage

67

Keywords

Circuit simulation; Computer simulation; Delay; Equivalent circuits; Nonhomogeneous media; Packaging; Resistors; Silicon; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference. Digest of Technical Papers. 1967 IEEE International

Conference_Location

Philadelphia, PA, USA

Type

conf

DOI

10.1109/ISSCC.1967.1154523

Filename

1154523