Title :
Investigation of Se ion implantation for GaAs very high speed gate array
Author :
Jianghong, Zhang ; Macheng, Song ; Hao Jingchen ; Yaguang, Lian
Author_Institution :
Nat. Key Lab. of ASIC, Hebei, China
Abstract :
Se+-implanted GaAs substrates were performed at room temperature. We investigated the effects of incident energy, the ion dose and the incident angle. The rapid thermal annealing (RTA) temperature and the duration time as well as all these parameter were optimized. Using Se+-implantation at the dose of 1×10 13 cm-2, we got the n+-type thin layers on GaAs substrates. The carrier mobility was 3010 cm2/v.s, and the impurity activity is greater than 74%. The Se+ implanted GaAs substrates were successfully used in the fabrication of 3K-gates GaAs gate array
Keywords :
III-V semiconductors; MESFET integrated circuits; carrier mobility; gallium arsenide; integrated circuit technology; ion implantation; logic arrays; rapid thermal annealing; selenium; very high speed integrated circuits; GaAs very high speed gate array; GaAs:Se; MESFET IC; Se ion implantation; carrier mobility; impurity activity; rapid thermal annealing; Fabrication; Gallium arsenide; Impurities; Integrated circuit technology; Ion implantation; Laboratories; Logic arrays; MESFETs; Rapid thermal annealing; Temperature;
Conference_Titel :
Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4308-5
DOI :
10.1109/ICMMT.1998.768389
