Title :
2-Watt broadband GaN power amplifier RFIC using the ƒT doubling technique
Author :
El-Gabaly, Ahmed M. ; Saavedra, Carlos E.
Author_Institution :
Peraso Technologies, Toronto, ON, Canada M5J 2L7
Abstract :
A broadband power amplifier (PA) is reported using the ƒt doubling technique which delivers more than 2 W of saturated output power over a span of 6 GHz. The PA exhibits a power gain of 12.2 ± 0.2 dB over its operating frequency range, yielding a gain-bandwidth product of more than 1.5 ƒt. The PA has an OP1dB and an OIP3 of more than 31 dBm and 40 dBm respectively. The IC was fabricated using a 0.8-µm GaN process and the core circuit occupies an area of 925 µm × 895 µm.
Keywords :
Bandwidth; Logic gates; Probes; Radio frequency; Silicon carbide;
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2012.6258287