DocumentCode :
2845665
Title :
Nonlinear optical gains in polarization switching of semiconductor lasers
Author :
Takahashi, Yutaka ; Neogi, Arup ; Kawaguchi, Hitoshi
Author_Institution :
Dept. of Electr. & Inf. Eng., Yamagata Univ., Yonezawa, Japan
fYear :
1998
fDate :
11-15 May 1998
Firstpage :
745
Lastpage :
748
Abstract :
We have numerically studied the nonlinear gain coefficients for the optical fields in parallel and orthogonal polarizations in semiconductor lasers by solving the equation of motion for the density matrix in perturbation series. The electronic band structures and the transition matrix elements used in the calculations are obtained by diagonalizing Luttinger´s Hamiltonian. In the present analysis for InGaAsP lasers, the cross-saturation coefficient for the parallel polarizations is twice as large as the self-saturation. And the cross-saturation coefficient for the orthogonal polarizations, which affects the polarization switching and polarization bistable operations of the laser, rests between the two. The relative magnitude of self-saturation coefficients and cross-saturation coefficients for orthogonal polarizations satisfies the condition for polarization bistable operations
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; light polarisation; semiconductor lasers; InGaAsP; InGaAsP lasers; cross-saturation coefficient; density matrix; diagonalizing Luttinger´s Hamiltonian; electronic band structures; equation of motion; nonlinear optical gains; optical fields; orthogonal polarizations; perturbation series; polarization bistable operations; polarization switching; self-saturation; semiconductor lasers; transition matrix elements; Communication switching; Equations; Laser modes; Nonlinear optics; Optical bistability; Optical materials; Optical polarization; Optical saturation; Semiconductor lasers; Tellurium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
ISSN :
1092-8669
Print_ISBN :
0-7803-4220-8
Type :
conf
DOI :
10.1109/ICIPRM.1998.712757
Filename :
712757
Link To Document :
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