DocumentCode :
2845819
Title :
Development of W and D-band Si-based MMICs at National Taiwan University
Author :
Wang, Huei
Author_Institution :
Department of Electrical Engineering and Graduate Institute of Communication Engineering, National Taiwan University, Taipei, Taiwan 10617, ROC
fYear :
2012
fDate :
17-22 June 2012
Firstpage :
1
Lastpage :
3
Abstract :
This paper summarizes the development of W and D-band Si-based MMICs at National Taiwan University. We have demonstrated many impressive results, including LNAs, PAs, VCOs, switches, and mixers. Both CMOS and SiGe BiCMOS technologies were applied in these designs.
Keywords :
Broadband amplifiers; CMOS integrated circuits; CMOS technology; Gallium arsenide; PHEMTs; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
ISSN :
0149-645X
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2012.6258334
Filename :
6258334
Link To Document :
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