DocumentCode :
2846013
Title :
Reliability results of HBTs with an InGaP emitter
Author :
Whitman, Charles S.
fYear :
2005
fDate :
Oct. 30, 2005
Firstpage :
19
Lastpage :
41
Keywords :
Acceleration; Degradation; Heterojunction bipolar transistors; Maximum likelihood estimation; Qualifications; Radio frequency; Temperature dependence; Temperature distribution; Temperature measurement; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ROCS Workshop, 2005. [Reliability of Compound Semiconductors]
Print_ISBN :
0-7908-0106-X
Type :
conf
DOI :
10.1109/ROCS.2005.201551
Filename :
1563935
Link To Document :
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