DocumentCode :
2846025
Title :
Evaluation of SiGe:C HBT intrinsic reliabillty using conventional & step stress methodologies
Author :
Gaw, Craig ; Arnold, T. ; Martin, R. ; Zhang, L. ; Zupac, D.
fYear :
2005
fDate :
Oct. 30, 2005
Firstpage :
43
Lastpage :
56
Keywords :
Bonding; Circuit testing; Degradation; Equations; Heterojunction bipolar transistors; Integrated circuit testing; Temperature; Thermal conductivity; Thermal stresses; Virtual colonoscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ROCS Workshop, 2005. [Reliability of Compound Semiconductors]
Print_ISBN :
0-7908-0106-X
Type :
conf
DOI :
10.1109/ROCS.2005.201552
Filename :
1563936
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2846025
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