Title :
A 25.6 W 13.56 MHz wireless power transfer system with a 94% efficiency GaN Class-E power amplifier
Author :
Chen, W. ; Chinga, R.A. ; Yoshida, S. ; Lin, J. ; Chen, C. ; Lo, W.
Author_Institution :
Industrial Technology Research Institute, Hsinchu, 31040, Taiwan
Abstract :
In this work, we propose the design and implementation of a 13.56 MHz GaN Class-E power amplifier, which takes into account transistor parasitic effects. The design uses the parasitic capacitance of the transistor to replace the charging capacitance, simplifying the circuit structure and obtaining a 93.6% efficiency at output power of 26.8 W. In addition, a wireless power transfer system using the proposed Class-E amplifier is demonstrated, achieving a 73.4% system efficiency when the power delivered to the load is 25.6 W.
Keywords :
Gallium nitride; Logic gates; Power amplifiers; Power generation; Power transmission; Transistors; Wireless communication; Power transmission; energy efficiency; gallium nitride; power MOSFET; power amplifiers; silicon carbide;
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2012.6258349