An investigation and comparison of 45-degree spread the modeland other techniques to extract junction temperature of HBT and PHEMT for reliability life test
Author :
Chen, S.C. ; Hsiao, B.L. ; Chou, Frank ; Yu, Karl ; Chou, H.C. ; Wu, C.S.
fYear :
2005
fDate :
Oct. 30, 2005
Firstpage :
81
Lastpage :
93
Keywords :
Electric variables measurement; Foundries; Gallium arsenide; Heterojunction bipolar transistors; Life estimation; Life testing; PHEMTs; Semiconductor device testing; Temperature; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ROCS Workshop, 2005. [Reliability of Compound Semiconductors]
