DocumentCode
2846060
Title
An investigation and comparison of 45-degree spread the modeland other techniques to extract junction temperature of HBT and PHEMT for reliability life test
Author
Chen, S.C. ; Hsiao, B.L. ; Chou, Frank ; Yu, Karl ; Chou, H.C. ; Wu, C.S.
fYear
2005
fDate
Oct. 30, 2005
Firstpage
81
Lastpage
93
Keywords
Electric variables measurement; Foundries; Gallium arsenide; Heterojunction bipolar transistors; Life estimation; Life testing; PHEMTs; Semiconductor device testing; Temperature; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
ROCS Workshop, 2005. [Reliability of Compound Semiconductors]
Print_ISBN
0-7908-0106-X
Type
conf
DOI
10.1109/ROCS.2005.201555
Filename
1563939
Link To Document