Title :
Multi-bit N-Array Asynchronous Counting Circuit Based on Memristor
Author :
XiaoBo, Tian ; Hongshan, Nie ; Qingjiang, Li ; Xin, Xu ; Hui, Xu ; Haijun, Liu
Author_Institution :
ESSS Center, Nat. Univ. of Defense Technol., Changsha, China
Abstract :
Hewlett Packard laboratory announced that they have found the missing memristor in 2008. One of memristor´s characteristics is that it can memorize charges that pass through it without electrical supply. Using that speciality, A kind of Multi-bit N-Array asynchronous counting circuit is designed based on linear dopant drift memristor model. The research work on this counting circuit provides methods for single memristor to realize precisely controlling and recognition of its multi-memristance status. The essential difference between this counting circuit and traditional one is that the former one works on memristor´s ability to memorize charges that passes through it.
Keywords :
asynchronous circuits; memristors; Hewlett Packard laboratory; counting circuit; linear dopant drift memristor model; multibit N-array asynchronous counting circuit; multimemristance status; Counting circuits; Integrated circuit modeling; Memristors; Radiation detectors; Resistance; Semiconductor process modeling; Testing; counting circuit; linear dopant drift; memristor; nanotechnology;
Conference_Titel :
Intelligent System Design and Engineering Application (ISDEA), 2010 International Conference on
Conference_Location :
Changsha
Print_ISBN :
978-1-4244-8333-4
DOI :
10.1109/ISDEA.2010.334
