Title :
A new low-voltage breakdown diode
Author_Institution :
National Semiconductor, Santa Clara, CA, USA
Keywords :
Breakdown voltage; Circuits; Displays; Electric breakdown; Electronic switching systems; FETs; Regulators; Resistors; Semiconductor diodes; Turning;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1968 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1968.1154617
