• DocumentCode
    28463
  • Title

    Complementary Magnetic Tunnel Junction Logic

  • Author

    Friedman, Joseph S. ; Sahakian, Alan V.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA
  • Volume
    61
  • Issue
    4
  • fYear
    2014
  • fDate
    Apr-14
  • Firstpage
    1207
  • Lastpage
    1210
  • Abstract
    This brief proposes and analyzes a novel logic family composed solely of magnetic tunnel junctions (MTJs) to form complimentary pull-up and pull-down networks. This logic family solves the challenge of direct cascading in spintronic logic circuits while also providing non-volatile data storage. The increased logic density possible with complementary MTJs coupled with a charge pulse switching mechanism driven by ferromagnet polarization permits highly efficient logical computation. Furthermore, the presence of non-volatile memory within the logic structure provides a feasible hardware for non-von Neumann computer architectures.
  • Keywords
    MRAM devices; logic circuits; magnetic switching; magnetic tunnelling; magnetoelectronics; charge pulse switching mechanism; complementary magnetic tunnel junction logic; complimentary pull-down networks; complimentary pull-up networks; ferromagnet polarization; logic density; nonvolatile data storage; nonvolatile memory; nonvon Neumann computer architectures; spintronic logic circuits; CMOS integrated circuits; Junctions; Logic gates; Magnetic tunneling; Magnetization; Switches; Wires; Beyond CMOS computing; magnetic tunnel junction (MTJ); non-von Neumann architecture; spintronic logic;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2014.2306395
  • Filename
    6763088