DocumentCode
28463
Title
Complementary Magnetic Tunnel Junction Logic
Author
Friedman, Joseph S. ; Sahakian, Alan V.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA
Volume
61
Issue
4
fYear
2014
fDate
Apr-14
Firstpage
1207
Lastpage
1210
Abstract
This brief proposes and analyzes a novel logic family composed solely of magnetic tunnel junctions (MTJs) to form complimentary pull-up and pull-down networks. This logic family solves the challenge of direct cascading in spintronic logic circuits while also providing non-volatile data storage. The increased logic density possible with complementary MTJs coupled with a charge pulse switching mechanism driven by ferromagnet polarization permits highly efficient logical computation. Furthermore, the presence of non-volatile memory within the logic structure provides a feasible hardware for non-von Neumann computer architectures.
Keywords
MRAM devices; logic circuits; magnetic switching; magnetic tunnelling; magnetoelectronics; charge pulse switching mechanism; complementary magnetic tunnel junction logic; complimentary pull-down networks; complimentary pull-up networks; ferromagnet polarization; logic density; nonvolatile data storage; nonvolatile memory; nonvon Neumann computer architectures; spintronic logic circuits; CMOS integrated circuits; Junctions; Logic gates; Magnetic tunneling; Magnetization; Switches; Wires; Beyond CMOS computing; magnetic tunnel junction (MTJ); non-von Neumann architecture; spintronic logic;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2014.2306395
Filename
6763088
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