DocumentCode
2846457
Title
A low voltage Q-band CMOS LNA with magnetic coupled cascode topology
Author
Yeh, Han-Chih ; Chiong, Chau-Ching ; Wang, Huei
Author_Institution
Dept. of Electrical Engineering and Graduate Institute of Communication Engineering, National Taiwan University, 1 Roosevelt Road, Sec. 4, 10617 Taipei, Taiwan, R. O. C.
fYear
2012
fDate
17-22 June 2012
Firstpage
1
Lastpage
3
Abstract
In this paper, a Q-band low noise amplifier (LNA) is designed using in 90-nm low power (LP) CMOS. This LNA achieves a high gain and low noise. Besides, a transformer is placed between the cascode devices to reduce the noise figure and enhance the stability, as well as also bandwidth. The LNA features a maximum small signal gain of 13.8 dB and a minimum noise figure of 3.8 dB at 37 GHz, with a power consumption of 18mW. The chip size is 0.93 × 0.52 mm2, including all the testing pads. To the best of our knowledge, this is the first magnetic coupled cascode LNA in Q-band reported to date.
Keywords
CMOS integrated circuits; Gain; Inductors; Noise; Noise figure; Topology; CMOS; LNA; MMIC; cascode;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location
Montreal, QC, Canada
ISSN
0149-645X
Print_ISBN
978-1-4673-1085-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2012.6258378
Filename
6258378
Link To Document