DocumentCode :
2846696
Title :
High voltage modulator for pulsed ion implantation
Author :
Elmoursi, Alaa A. ; Malaczynski, Gerard W. ; Hamdi, Aboud H.
Author_Institution :
General Motors Res. Labs., Warren, MI, USA
fYear :
1991
fDate :
Sept. 28 1991-Oct. 4 1991
Firstpage :
682
Abstract :
A low cost and reliable high voltage pulse modulator is described whose design is based on R-C circuits and which uses triggered spark gaps for switching. Oscilloscope photographs of the output pulse indicate the success of this design in fulfilling the waveform requirements. Furthermore, this pulse modulator was used in the pulse implantation of aluminum with nitrogen ions.<>
Keywords :
modulators; network synthesis; pulsed power technology; spark gaps; switching circuits; Al; HV; N/sub 2/; R-C circuits; design; high voltage pulse modulator; pulsed ion implantation; pulsed power technology; switching; triggered spark gaps; Aluminum; Costs; Ion implantation; Nitrogen; Oscilloscopes; Pulse circuits; Pulse modulation; Spark gaps; Switching circuits; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industry Applications Society Annual Meeting, 1991., Conference Record of the 1991 IEEE
Conference_Location :
Dearborn, MI, USA
Print_ISBN :
0-7803-0453-5
Type :
conf
DOI :
10.1109/IAS.1991.178310
Filename :
178310
Link To Document :
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