New scanning photoluminescence technique for quantitative mapping the surface recombination velocity in InP and related materials

Author

Krawczyk, S.K. ; Bejar, M. ; Blanchet, R.C. ; Khoukh, A. ; Sermage, B. ; Cui, D. ; Pavlidis, D.

Author_Institution

Lab. d´´Electron., Ecole Centrale de Lyon, Ecully, France

fYear

1998

fDate

11-15 May 1998

Firstpage

751

Lastpage

754

Abstract

This paper introduces a new approach, based on Room Temperature (RT) Scanning Photoluminescence (SPL) measurements, for non-destructive quantitative mapping of the surface or interface recombination velocity in compound semiconductor structures. The developed technique is validated and applied here to spatially resolved evaluation of the surface recombination velocity of InP substrates and InGaAs(C)/InP heterostructures

Keywords

III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; semiconductor heterojunctions; surface recombination; InGaAs(C)/InP heterostructures; InGaAsC-InP; InP; InP substrates; interface recombination velocity; quantitative mapping; scanning photoluminescence technique; surface recombination velocity; Doping; Indium phosphide; Light emitting diodes; Photoluminescence; Radiative recombination; Spatial resolution; Substrates; Surface emitting lasers; Temperature; Velocity measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712764

Filename

712764