A radiation hard pixel design for x-ray imagers

Author

Zelakiewicz, Scott ; Albagli, Douglas ; Henn, William ; Couture, Aaron

Author_Institution

Gen. Electr. Global Res., Niskayuna

Volume

6

fYear

2007

fDate

Oct. 26 2007-Nov. 3 2007

Firstpage

4602

Lastpage

4603

Abstract

Extending, the lifetime of amorphous silicon based radiation imagers is necessary for numerous applications including industrial inspection and radiation therapy. To achieve a longer lifetime, a new pixel design has been fabricated. This design incorporates a gated diode that significantly increase mitigates the effect of radiation damage. Additionally, each pixel incorporates a storage capacitor to increase the dynamic range of the pixel and a reflective layer to maximize the light collection efficiency. We report on the device performance of this design and the imaging performance of the complete detector.

Keywords

X-ray imaging; capacitors; radiation therapy; silicon radiation detectors; X-ray imagers; amorphous silicon based radiation imagers; device performance; hard pixel design; industrial inspection; light collection efficiency; radiation therapy; reflective layer; storage capacitor; Amorphous silicon; Biomedical applications of radiation; Capacitors; Dynamic range; Metallization; P-i-n diodes; Pixel; Radiation detectors; Thin film transistors; X-ray imaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2007. NSS '07. IEEE

Conference_Location

Honolulu, HI

ISSN

1095-7863

Print_ISBN

978-1-4244-0922-8

Electronic_ISBN

1095-7863

Type

conf

DOI

10.1109/NSSMIC.2007.4437133

Filename

4437133