Title : 
A methane sensitive Ni/n-GaN Schottky barrier sensor
         
        
            Author : 
Hudeish, A.Y. ; Abdul Aziz, A. ; Hassan, Z. ; Tan, C.K. ; Abu Hassan, H. ; Ibrahim, K.
         
        
            Author_Institution : 
Sch. of Phys., Univ. Sains Malaysia, Penang, Malaysia
         
        
        
        
        
        
            Abstract : 
In this work, the forward current of Ni/GaN Schottky barrier is found to increase significantly upon Ar, 5%CH4/90%Ar, 10%CH4/90%Ar and 15%CH4/85%Ar ambient. Analysis of the current-voltage characteristics as a function of temperature showed strong correlations Schottky barrier height (SBH) which is related to the work function of Ni and electron affinity of GaN. The resistance of Ni/n-GaN sensor decreased with operating temperatures or concentration of methane were increased. The Ni/ n-GaN samples in Ar ambient exhibited a higher resistance than the CH4 within the temperature range used in this study.
         
        
            Keywords : 
III-V semiconductors; Schottky barriers; electron affinity; gallium compounds; gas sensors; nickel; semiconductor devices; wide band gap semiconductors; work function; Ni-GaN; Schottky barrier height; current-voltage characteristics; electron affinity; forward current; methane; methane sensitive Ni/n-GaN Schottky barrier sensor; work function; Argon; Chemical sensors; Electrodes; Gallium nitride; Gas detectors; Natural gas; Schottky barriers; Stability; Temperature distribution; Temperature sensors;
         
        
        
        
            Conference_Titel : 
Sensors and the International Conference on new Techniques in Pharmaceutical and Biomedical Research, 2005 Asian Conference on
         
        
            Print_ISBN : 
0-7803-9370-8
         
        
        
            DOI : 
10.1109/ASENSE.2005.1564521