Title :
The behavior of junction-gate field-effect transistors beyond pinchoff
Author :
Grebene, A. ; Ghandhi, S.
Author_Institution :
Rensselaer Polytechnic Institute, Troy, NY, USA
Keywords :
Boundary conditions; Electron mobility; FETs; Lattices; Mathematical model; Poisson equations; Semiconductor materials; Silicon; Solid modeling; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1968 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1968.1154671
