A novel isolated, compensated Darlington based-drive configuration

Author

Enslin, J.H.R. ; Hartman, S.J.B.

Author_Institution

Dept. of Electr. Eng., Stellenbosch Univ., South Africa

fYear

1991

fDate

Sept. 28 1991-Oct. 4 1991

Firstpage

939

Abstract

An isolated version of the compensated base-drive for high power bipolar transistor switches is introduced. A unique pulse transformer is used to drive a high power bipolar transistor by means of a compensated Darlington pair, consisting of an IGBT driving transistor and a high current single bipolar transistor. In high efficiency, high power bridge applications of high current switches, the saturation voltage should be ultra-low, which implies a high power bipolar transistor in deep saturation. This isolated base-drive circuit is described and evaluated in these applications.<>

Keywords

bipolar transistors; bridge circuits; driver circuits; power transistors; IGBT driving transistor; bridge applications; compensated Darlington based-drive configuration; high current switches; high power bipolar transistor switches; isolated base-drive circuit; pulse transformer; saturation voltage; Africa; Bipolar transistors; Bridge circuits; Circuit topology; Insulated gate bipolar transistors; Pulse transformers; Switches; Switching circuits; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Society Annual Meeting, 1991., Conference Record of the 1991 IEEE

Conference_Location

Dearborn, MI, USA

Print_ISBN

0-7803-0453-5

Type

conf

DOI

10.1109/IAS.1991.178350

Filename

178350