Title :
A novel isolated, compensated Darlington based-drive configuration
Author :
Enslin, J.H.R. ; Hartman, S.J.B.
Author_Institution :
Dept. of Electr. Eng., Stellenbosch Univ., South Africa
fDate :
Sept. 28 1991-Oct. 4 1991
Abstract :
An isolated version of the compensated base-drive for high power bipolar transistor switches is introduced. A unique pulse transformer is used to drive a high power bipolar transistor by means of a compensated Darlington pair, consisting of an IGBT driving transistor and a high current single bipolar transistor. In high efficiency, high power bridge applications of high current switches, the saturation voltage should be ultra-low, which implies a high power bipolar transistor in deep saturation. This isolated base-drive circuit is described and evaluated in these applications.<>
Keywords :
bipolar transistors; bridge circuits; driver circuits; power transistors; IGBT driving transistor; bridge applications; compensated Darlington based-drive configuration; high current switches; high power bipolar transistor switches; isolated base-drive circuit; pulse transformer; saturation voltage; Africa; Bipolar transistors; Bridge circuits; Circuit topology; Insulated gate bipolar transistors; Pulse transformers; Switches; Switching circuits; Thyristors; Voltage;
Conference_Titel :
Industry Applications Society Annual Meeting, 1991., Conference Record of the 1991 IEEE
Conference_Location :
Dearborn, MI, USA
Print_ISBN :
0-7803-0453-5
DOI :
10.1109/IAS.1991.178350
