Title :
Carrier lifetime in p-doped InGaAs and InGaAsP
Author :
Sermage, B. ; Benchimol, J.L. ; Cohen, G.M.
Author_Institution :
France Telecom, CNET, Bagneux, France
Abstract :
Carrier lifetime has been measured in c and be doped InGaAs and InGaAsP grown by chemical beam epitaxy. At high doping level, carrier lifetime in InGaAs is limited by Auger recombination which is slightly different from that of undoped InGaAs for the same hole density. Carbon doped InGaAsP shows non radiative recombinations linked to the amphoteric nature of carbon in these materials
Keywords :
Auger effect; III-V semiconductors; beryllium; carbon; carrier lifetime; chemical beam epitaxial growth; gallium arsenide; gallium compounds; hole density; indium compounds; semiconductor epitaxial layers; semiconductor growth; Auger recombination; InGaAs:Be; InGaAs:C; InGaAsP:Be; InGaAsP:C; carrier lifetime; chemical beam epitaxy; high doping level; radiative recombinations; Charge carrier lifetime; Chemicals; Doping; Epitaxial growth; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Radiative recombination;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712768
