Title :
Investigations of surface roughness of GaN based gas sensor using atomic force microscope
Author :
Hudeish, A.Y. ; Abdul Aziz, A. ; Hassan, Z. ; Tan, C.K. ; Abu Hassan, H. ; Ibrahim, K.
Author_Institution :
Sch. of Phys., Univ. Sains Malaysia, Penang, Malaysia
Abstract :
In this paper, the properties of GaN based gas sensor with different thickness of platinum (Pt), prepared by sputtering method and annealed in air at 600°C were investigated. AFM micrography showed that the GaN and Pt films are grain-like, and the grain size increases after annealing upon gas exposure. The interaction between the Pt clusters and the GaN grains was investigated. Sensors fabricated with the Pt films exhibited a significant increase in their sensitivity and selectivity towards H2 detection when the thickness of Pt films is increased. Changes in the surface roughness for the different thickness of Pt/GaN due to specific adsorptions are presented. Possible applications and improvements of this technique are discussed.
Keywords :
adsorption; annealing; atomic force microscopy; gas sensors; grain size; hydrogen; platinum; semiconductor devices; sputtered coatings; surface roughness; 600 degC; AFM micrography; GaN; GaN based gas sensor; H2; H2 detection; Pt; adsorption; annealing; atomic force microscope; grain size; sputtering method; surface roughness; Annealing; Atomic force microscopy; Force sensors; Gallium nitride; Gas detectors; Photomicrography; Platinum; Rough surfaces; Sputtering; Surface roughness;
Conference_Titel :
Sensors and the International Conference on new Techniques in Pharmaceutical and Biomedical Research, 2005 Asian Conference on
Print_ISBN :
0-7803-9370-8
DOI :
10.1109/ASENSE.2005.1564544
