Investigations of surface roughness of GaN based gas sensor using atomic force microscope

Author

Hudeish, A.Y. ; Abdul Aziz, A. ; Hassan, Z. ; Tan, C.K. ; Abu Hassan, H. ; Ibrahim, K.

Author_Institution

Sch. of Phys., Univ. Sains Malaysia, Penang, Malaysia

fYear

2005

fDate

5-7 Sept. 2005

Firstpage

222

Lastpage

225

Abstract

In this paper, the properties of GaN based gas sensor with different thickness of platinum (Pt), prepared by sputtering method and annealed in air at 600°C were investigated. AFM micrography showed that the GaN and Pt films are grain-like, and the grain size increases after annealing upon gas exposure. The interaction between the Pt clusters and the GaN grains was investigated. Sensors fabricated with the Pt films exhibited a significant increase in their sensitivity and selectivity towards H₂ detection when the thickness of Pt films is increased. Changes in the surface roughness for the different thickness of Pt/GaN due to specific adsorptions are presented. Possible applications and improvements of this technique are discussed.

Keywords

adsorption; annealing; atomic force microscopy; gas sensors; grain size; hydrogen; platinum; semiconductor devices; sputtered coatings; surface roughness; 600 degC; AFM micrography; GaN; GaN based gas sensor; H₂; H₂ detection; Pt; adsorption; annealing; atomic force microscope; grain size; sputtering method; surface roughness; Annealing; Atomic force microscopy; Force sensors; Gallium nitride; Gas detectors; Photomicrography; Platinum; Rough surfaces; Sputtering; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors and the International Conference on new Techniques in Pharmaceutical and Biomedical Research, 2005 Asian Conference on

Print_ISBN

0-7803-9370-8

Type

conf

DOI

10.1109/ASENSE.2005.1564544

Filename

1564544