Title :
Influence of rising frequency on semiconductors in DC-DC conversion
Author :
Roudet, J. ; Ferrieux, J.P. ; Pérard, J.
Author_Institution :
Lab. d´´Electrotech. de Grenoble, Saint Martin d´´Heres, France
fDate :
Sept. 28 1991-Oct. 4 1991
Abstract :
For power ratings between one and fifty kilowatts, three switch technologies in medium and high frequency can be used: bipolar transistors, insulated gate bipolar transistor (IGBT), and MOSFET. A theoretical study has been verified on a 3 kW prototype, and the conclusions could be extended for more important power converters. The designer in power electronics must choose the commutation mode and the technology of the switch to obtain the best possible performances (frequency, efficiency, etc.). The aim of this work is to help the designer to make this choice.<>
Keywords :
power convertors; 1 to 50 kW; 3 kW; DC-DC conversion; IGBT; MOSFET; bipolar transistors; commutation mode; insulated gate bipolar transistor; power converters; power electronics; Energy conversion; Frequency conversion; Insulated gate bipolar transistors; Laboratories; MOSFET circuits; Power electronics; Prototypes; Pulse width modulation; Switches; Thyristors;
Conference_Titel :
Industry Applications Society Annual Meeting, 1991., Conference Record of the 1991 IEEE
Conference_Location :
Dearborn, MI, USA
Print_ISBN :
0-7803-0453-5
DOI :
10.1109/IAS.1991.178370
