• DocumentCode
    28476
  • Title

    Optically Switched-Drive-Based Unified Independent dv/dt and di/dt Control for Turn-Off Transition of Power MOSFETs

  • Author

    Riazmontazer, Hossein ; Mazumder, S.K.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Illinois at Chicago, Chicago, IL, USA
  • Volume
    30
  • Issue
    4
  • fYear
    2015
  • fDate
    Apr-15
  • Firstpage
    2338
  • Lastpage
    2349
  • Abstract
    To control the switching dynamics of an optically triggered hybrid device, a photonic-control mechanism is outlined. The optically triggered hybrid device comprises a power MOSFET, as the main power semiconductor device (PSD), and a pair of GaAs-based optically triggered power transistors (OTPTs), serving as the driver for the power MOSFET . The switching-transition controller modulates the turn-off transition of the power MOSFET by modulating the optical intensity of the OTPTs. The independent and unified $dv/dt$ and $di/dt$ control of the PSD is achieved using a single control circuit which also predicts the onset of transition between the $di/dt$ and the $dv/dt$ regions of control. Experimental control results validating the OTPT-based dynamical modulation of the turn-off characteristic of the power MOSFET are provided. In this study, the power MOSFET is chosen to be a SiC mosfet . However, the proposed photonic-control mechanism can be extended to Si power MOSFETS as well.
  • Keywords
    electric current control; power MOSFET; time-varying systems; voltage control; OTPT; PSD; optically switched-drive; optically triggered hybrid device; optically triggered power transistors; photonic-control mechanism; power MOSFET; power semiconductor device; switching dynamics control; switching-transition controller; turn-off transition; unified independent di/dt control; unified independent dv/dt control; Delays; Logic gates; MOSFET; Optical devices; Optical switches; Silicon carbide; Active gate drive; IGBT; di/dt; dv/dt; electromagnetic interference (EMI); gallium arsenide (GaAs); optical gate drive; optically triggered power transistor (OTPT); power mosfet; silicon carbide (SiC); switching loss; switching transients;
  • fLanguage
    English
  • Journal_Title
    Power Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-8993
  • Type

    jour

  • DOI
    10.1109/TPEL.2014.2327014
  • Filename
    6823719