• DocumentCode
    2847739
  • Title

    Microwave silicon windows for high-power broadband switching applications

  • Author

    Mortenson, K. ; Borrego, J. ; Bakeman, P. ; Gutmann, R.

  • Author_Institution
    Rensselaer Polytechnic Institute, Troy, N.Y., USA
  • Volume
    XII
  • fYear
    1969
  • fDate
    19-21 Feb. 1969
  • Firstpage
    120
  • Lastpage
    121
  • Abstract
    An X-band switch consisting of a silicon waveguide window with injecting structure will be described. The microwave component, capable of handling 40-kW peak, has a 0.4-dB loss and 10-dB isolation across the complete waveguide band.
  • Keywords
    Assembly; Conductivity; Contracts; Dielectrics; Flanges; Gaskets; Inductors; Insertion loss; Radio frequency; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1969 IEEE Internationa
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1969.1154712
  • Filename
    1154712
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2847739