Evaluation of InAlAs Schottky characteristics grown by MOCVD

Author

Ohshima, T. ; Moriguchi, H. ; Shigemasa, R. ; Gotoh, S. ; Tsunotani, M. ; Kimura, T.

Author_Institution

Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan

fYear

1998

fDate

11-15 May 1998

Firstpage

761

Lastpage

764

Abstract

Schottky characteristics of InAlAs grown by MOCVD have been evaluated. InAlAs Schottky characteristics is strongly affected by MOCVD growth temperature. The reverse current of InAlAs grown at 700°C is more than one order of magnitude larger than that for 750°C grown material. From DLTS measurement, a large signal due to an electron trap with an activation energy of 0.45 eV has been observed in InAlAs grown at 700°C. The results of C-V, Hall and SIMS measurements suggest that the trap is of acceptor-type and seems to be related not to impurities but to intrinsic defects. The mechanism of the large reverse current in InAlAs grown at 700°C is thought to be conduction through the trap

Keywords

III-V semiconductors; MOCVD; Schottky barriers; aluminium compounds; deep level transient spectroscopy; defect states; electron traps; indium compounds; semiconductor growth; semiconductor-metal boundaries; 700 degC; 750 degC; DLTS; Hall effect; InAlAs; InAlAs Schottky characteristics; MOCVD; SIMS measurements; acceptor-type trap; activation energy; electron trap; growth temperature; intrinsic defects; reverse current; Capacitance-voltage characteristics; Degradation; Electrodes; Electron traps; HEMTs; Indium compounds; MOCVD; MODFETs; Schottky barriers; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712770

Filename

712770