DocumentCode
2847989
Title
Aerosol fabrication of nanocrystals of InP and related materials
Author
Deppert, Knut ; Bovin, Jan-Olov ; Magnusson, Martin H. ; Malm, Jan-Olle ; Svensson, Chatrin ; Samuelson, Lars
Author_Institution
Nanometer Struct. Consortium, Lund Univ., Sweden
fYear
1998
fDate
11-15 May 1998
Firstpage
765
Lastpage
768
Abstract
Indium phosphide nanocrystals, with diameters of around 10 nm, have been produced via an aerosol route. The method is based on the formation of monodisperse indium droplets and the subsequent reaction with phosphine at elevated temperature. The size of the final InP nanocrystal is self-limited by the size of the introduced size-selected In droplet. This size can be tuned carefully, thus this method allows a narrow size distribution of the nanocrystals. The kinetics of the reaction of In to produce InP depends on the temperature and the phosphine flow. Extensive high resolution transmission electron microscopy studies lead to a consistent picture of the process. This process has been demonstrated for the fabrication of InP as well as GaAs nanocrystals. Our approach opens the possibility for efficient production of size-selected semiconductor nanocrystals and it will allow new types of self-assembly and control of quantum dots
Keywords
III-V semiconductors; aerosols; drops; indium compounds; nanostructured materials; semiconductor growth; transmission electron microscopy; GaAs; GaAs nanocrystals; InP; InP nanocrystals; aerosol fabrication; aerotaxy; elevated temperature; high resolution transmission electron microscopy; monodisperse indium droplets; phosphine; phosphine flow; quantum dots; reaction kinetics; self-assembly; size-selected In droplet; size-selected semiconductor nanocrystals; Aerosols; Fabrication; Gallium arsenide; Indium phosphide; Kinetic theory; Nanocrystals; Production; Self-assembly; Temperature dependence; Transmission electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location
Tsukuba
ISSN
1092-8669
Print_ISBN
0-7803-4220-8
Type
conf
DOI
10.1109/ICIPRM.1998.712771
Filename
712771
Link To Document