• DocumentCode
    2848123
  • Title

    Broadband power amplification with gunn effect diodes

  • Author

    Hines, M. ; Buntschuh, C.

  • Author_Institution
    Microwave Associates, Inc., Burlington, MA, USA
  • Volume
    XII
  • fYear
    1969
  • fDate
    19-21 Feb. 1969
  • Firstpage
    28
  • Lastpage
    29
  • Abstract
    Coherent single-frequency power amplification has been obtained at X-band. The bandwidth exceeds 2 GHz with 8-dB gain. Computer simulation indicates bandwidths should exceed 40% with simple networks.
  • Keywords
    Bandwidth; Capacitance; Computer simulation; Frequency; Gallium arsenide; Gunn devices; Power amplifiers; Radiofrequency amplifiers; Semiconductor diodes; Tuning;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1969 IEEE Internationa
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1969.1154736
  • Filename
    1154736
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2848123