Title :
Broadband power amplification with gunn effect diodes
Author :
Hines, M. ; Buntschuh, C.
Author_Institution :
Microwave Associates, Inc., Burlington, MA, USA
Abstract :
Coherent single-frequency power amplification has been obtained at X-band. The bandwidth exceeds 2 GHz with 8-dB gain. Computer simulation indicates bandwidths should exceed 40% with simple networks.
Keywords :
Bandwidth; Capacitance; Computer simulation; Frequency; Gallium arsenide; Gunn devices; Power amplifiers; Radiofrequency amplifiers; Semiconductor diodes; Tuning;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1969 IEEE Internationa
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1969.1154736
