• DocumentCode
    2848161
  • Title

    Post-Silicon Design Methodology on Chip Power Characterization, Validation, and Debug Applied on High Performance Per Watt Microprocessor

  • Author

    Chen, Yuan-Chuan Steven ; Lu, Daniel ; Yuan, Gang

  • Author_Institution
    Intel Corp., Hillsboro
  • fYear
    2007
  • fDate
    25-27 April 2007
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    As performance per Watt concept being adapted on CPU´s performance, a comprehensive post-silicon design methodology on chip power characterization, debug, and validation developed for an energy-efficient product performance become ever more important. An infrared photon-emission (IREM) based technique has been established to meet the needs. With those developed tool capabilities, we can validate simulated fullchip power, determine the causes of excessive power leakage, generate die power and thermal maps, and eventually optimize follow-on designs for power performance. This newly developed techniques have been applied and proven reusable on multiple core microprocessors fabricated under 90 nm and 65 nm CMOS technology. Examples of 5-8% power saving as compared with the first silicon data are presented here to demonstrate the success on debug and design optimization on full chip power.
  • Keywords
    CMOS integrated circuits; integrated circuit design; microprocessor chips; optical microscopy; CMOS technology; chip power characterization; debug; design optimization; energy-efficient product; high performance per watt microprocessor; infrared photon-emission based technique; multiple core microprocessors; post-silicon design methodology; size 65 nm; size 90 nm; validation; CMOS technology; Design methodology; Design optimization; Energy management; Leakage current; Microprocessors; Power generation; Silicon; Thermal management; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Design, Automation and Test, 2007. VLSI-DAT 2007. International Symposium on
  • Conference_Location
    Hsinchu
  • Print_ISBN
    1-4244-0583-1
  • Electronic_ISBN
    1-4244-0583-1
  • Type

    conf

  • DOI
    10.1109/VDAT.2007.373233
  • Filename
    4239425