DocumentCode
2848535
Title
On-Chip VDC Circuit for SRAM Power Management
Author
Lee, C.F. ; Lin, Wesley ; Lai, F.S. ; Lin, S.C.
Author_Institution
Taiwan Semicond. Manuf. Co. Ltd., Hsinchu
fYear
2007
fDate
25-27 April 2007
Firstpage
1
Lastpage
4
Abstract
Leakage current becomes the dominant factor for contributing to the static power consumption. Power management technique is then required to bring down the power consumption. One of the most effective methods is to reduce the power supply voltage in the standby mode or in the power down active mode. In this paper, a simple on-chip voltage down converter is proposed. By designing an internal reference voltage that is proportional to the device threshold voltage, the SRAM cell circuit states can be preserved within a broad range of power supply and temperature. For the 1V-to-0.6V dc-dc conversion, this on-chip VDC only consumes 156 muW standby power and is within 2 mV output voltage variation for load current varying from 1 mu A to 10 mA. By comparing with other power management techniques, the on-chip VDC method is excellent in the static power saving, overall design simplicity and small layout area.
Keywords
DC-DC power convertors; SRAM chips; leakage currents; DC-DC conversion; SRAM power management; current 1 muA to 10 mA; device threshold voltage; leakage current; on-chip VDC circuit; power 156 muW; power down active mode; static power consumption; voltage down converter; CMOS technology; Circuits; Emergency power supplies; Energy consumption; Energy management; Leakage current; Power supplies; Random access memory; Subthreshold current; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design, Automation and Test, 2007. VLSI-DAT 2007. International Symposium on
Conference_Location
Hsinchu
Print_ISBN
1-4244-0583-1
Electronic_ISBN
1-4244-0583-1
Type
conf
DOI
10.1109/VDAT.2007.372757
Filename
4239451
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