DocumentCode :
2848535
Title :
On-Chip VDC Circuit for SRAM Power Management
Author :
Lee, C.F. ; Lin, Wesley ; Lai, F.S. ; Lin, S.C.
Author_Institution :
Taiwan Semicond. Manuf. Co. Ltd., Hsinchu
fYear :
2007
fDate :
25-27 April 2007
Firstpage :
1
Lastpage :
4
Abstract :
Leakage current becomes the dominant factor for contributing to the static power consumption. Power management technique is then required to bring down the power consumption. One of the most effective methods is to reduce the power supply voltage in the standby mode or in the power down active mode. In this paper, a simple on-chip voltage down converter is proposed. By designing an internal reference voltage that is proportional to the device threshold voltage, the SRAM cell circuit states can be preserved within a broad range of power supply and temperature. For the 1V-to-0.6V dc-dc conversion, this on-chip VDC only consumes 156 muW standby power and is within 2 mV output voltage variation for load current varying from 1 mu A to 10 mA. By comparing with other power management techniques, the on-chip VDC method is excellent in the static power saving, overall design simplicity and small layout area.
Keywords :
DC-DC power convertors; SRAM chips; leakage currents; DC-DC conversion; SRAM power management; current 1 muA to 10 mA; device threshold voltage; leakage current; on-chip VDC circuit; power 156 muW; power down active mode; static power consumption; voltage down converter; CMOS technology; Circuits; Emergency power supplies; Energy consumption; Energy management; Leakage current; Power supplies; Random access memory; Subthreshold current; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Design, Automation and Test, 2007. VLSI-DAT 2007. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0583-1
Electronic_ISBN :
1-4244-0583-1
Type :
conf
DOI :
10.1109/VDAT.2007.372757
Filename :
4239451
Link To Document :
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