Title :
The variable threshold FET: Theory and experiment
Author :
Sewell, F. ; Wegener, H. ; Lewis, Elfed
Author_Institution :
Sperry Rand Res. Center, Sudbury, Mass., USA
Abstract :
The general theoretical model predicts the amount of threshold voltage change with time for both writing and storage modes of operation. Experimental data fit these theoretical expressions containing no adjustable parameter.
Keywords :
Capacitors; Conductivity; Contracts; Difference equations; Electrodes; FETs; Insulation; Poisson equations; Threshold voltage; Writing;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1969 IEEE Internationa
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1969.1154768
