Title :
The interaction of technology and performance in complementary-symmetry MOS integrated circuits
Author :
Ahrons, R. ; Gardner, R.
Author_Institution :
RCA Electronic Componenets, Somerville, N.J., USA
Abstract :
The technology of complementary MOS has already resulted in significant advantages in circuit simplicity, speed-power, and noise immunization. Future technological improvements to increase device gain, reduce capacity, and increase packing density will make complementary MOS even more attractive. The relationships among device physics, processing technology and performance will be presented.
Keywords :
Capacitance; Delay; Equations; Integrated circuit technology; Inverters; MOS integrated circuits; MOSFETs; Switching circuits; Threshold voltage; Transistors;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1969 IEEE Internationa
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1969.1154771
