DocumentCode :
2848728
Title :
Modeling of advanced memories
Author :
Makarov, A. ; Selberherr, S. ; Sverdlov, V.
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Wien, Austria
fYear :
2011
fDate :
17-18 Nov. 2011
Firstpage :
1
Lastpage :
2
Abstract :
Results of modeling of advanced memories, such as one-transistor/no capacitor random access memory (Z-RAM), Resistive RAM (RRAM), and Spin Transfer Torque Magnetic RAM (STTRAM), are presented.
Keywords :
random-access storage; RRAM; STTRAM; Z-RAM; advanced memories; one-transistor-no capacitor random access memory; resistive RAM; spin transfer torque magnetic RAM; Capacitors; Junctions; Magnetic hysteresis; Magnetic tunneling; Phase change random access memory; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
ISSN :
Pending
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
Type :
conf
DOI :
10.1109/EDSSC.2011.6117568
Filename :
6117568
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2848728
بازگشت