DocumentCode :
2848753
Title :
A Highly Reliable Multi-level and 2-bit/cell Operation of Wrapped-Select-Gate (WSG) SONOS Memory with Optimized ONO Thickness
Author :
Wu, Woei-Cherng ; Chao, Tien-Sheng ; Peng, Wu-Chin ; Yang, Wen-Luh ; Wang, Jer-Chyi ; Chen, Jian-Hao ; Ma, Ming-Wen ; Lai, Chao-Sung ; Yang, Tsung-Yu ; Chen, Tzu-Ping ; Chen, Chien-Hung ; Lin, Chih-Hung ; Chen, Hwi-Huang ; Ko, Joe
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu
fYear :
2007
fDate :
23-25 April 2007
Firstpage :
1
Lastpage :
2
Abstract :
High-performance wrapped-select-gate (WSG) SONOS (silicon-oxide-nitride-silicon) memory cells with multi-level and 2-bit/cell operation have been successfully demonstrated. The source-side injection mechanism with different ONO thickness in WSG-SONOS memory was well investigated. The different programming efficiency of the WSG-SONOS memory with different ONO thickness can be explained by the lateral electrical field extracted from the simulation. Furthermore, multi-level storage is easily obtained and well Vth distribution is also presented. High program/erase speed (10 us/5 ms) and low programming current (3.5 u/A) are performed to achieve the multi-level operation with excellent gate and drain disturbance, second-bit effect, data retention and endurance.
Keywords :
charge injection; circuit reliability; flash memories; silicon compounds; 2-bit memory cell operation; Si-SiO2-SiN-SiO2-Si; data endurance; data retention; drain disturbance; erase speed; gate disturbance; high reliable multilevel SONOS memory; lateral electrical field extraction; multilevel storage; optimized ONO thickness; programming current; programming efficiency; second-bit effect; source-side injection mechanism; wrapped-select-gate silicon-oxide-nitride-silicon memory cells; Chaos; Data mining; Flash memory; Interface states; MONOS devices; Microelectronics; P-n junctions; Physics; SONOS devices; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location :
Hsinchu
ISSN :
1524-766X
Print_ISBN :
1-4244-0584-X
Electronic_ISBN :
1524-766X
Type :
conf
DOI :
10.1109/VTSA.2007.378896
Filename :
4239464
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2848753
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