Title :
Dual-bit SONOS FinFET Non-Volatile Memory Cell and New Method of Charge Detection
Author :
Padilla, Alvaro ; Liu, Tsu-Jae King
Author_Institution :
Univ. of California at Berkeley, Berkeley
Abstract :
A new charge detection method in which the off-state current is used to detect charge stored near to the drain is demonstrated for dual-bit SONOS FinFET NVM cells for the first time. This method is very sensitive to charge stored near to the drain electrode and thus can facilitate gate-length scaling of dual-bit SONOS NVM devices.
Keywords :
MOS memory circuits; flash memories; charge detection method; charge storage detection; drain electrode; dual-bit SONOS FinFET nonvolatile memory cell; flash NVM; gate-length scaling; off-state current; silicon-oxide-nitride-oxide-silicon memory cell; Dielectrics; Electrodes; Electronic mail; Electrons; FinFETs; Flash memory; Nonvolatile memory; SONOS devices; Tunneling; Voltage;
Conference_Titel :
VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0584-X
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2007.378903
